CSD15571Q2
- Mfr.Part #
- CSD15571Q2
- Manufacturer
- Texas Instruments
- Package / Case
- 6-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 22A 6SON
- Stock
- 980
- In Stock :
- 980
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 5A, 10V
- Terminal Form :
- NO LEAD
- Element Configuration :
- Single
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Thickness :
- 750μm
- Transistor Application :
- SWITCHING
- Number of Elements :
- 2
- Turn-Off Delay Time :
- 9.9 ns
- Length :
- 2mm
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 20V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Number of Terminations :
- 6
- Number of Pins :
- 6
- Continuous Drain Current (ID) :
- 22A
- Fall Time (Typ) :
- 4.1 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 6.7nC @ 10V
- Mounting Type :
- Surface Mount
- Additional Feature :
- AVALANCHE RATED
- Base Part Number :
- CSD15571
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Factory Lead Time :
- 6 Weeks
- Case Connection :
- DRAIN
- Number of Channels :
- 1
- Turn On Delay Time :
- 17.2 ns
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta
- Contact Plating :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 419pF @ 10V
- Width :
- 2mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation :
- 2.5W
- Package / Case :
- 6-WDFN Exposed Pad
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 17.2ns
- Terminal Position :
- Dual
- Series :
- NexFET™
- Datasheets
- CSD15571Q2

N-Channel Tape & Reel (TR) 15m Ω @ 5A, 10V ±20V 419pF @ 10V 6.7nC @ 10V 6-WDFN Exposed Pad
CSD15571Q2 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 419pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [9.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 17.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
CSD15571Q2 Features
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 9.9 ns
CSD15571Q2 Applications
There are a lot of Texas Instruments
CSD15571Q2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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