CSD13383F4T
- Mfr.Part #
- CSD13383F4T
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 2.9A 3PICOSTAR
- Stock
- 11,756
- In Stock :
- 11,756
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Package / Case :
- 3-XFDFN
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 12V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Width :
- 635μm
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 500mW Ta
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 2.6nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 123ns
- Terminal Form :
- NO LEAD
- Number of Channels :
- 1
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.065Ohm
- Base Part Number :
- CSD13383
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A Ta
- Vgs(th) (Max) @ Id :
- 1.25V @ 250μA
- Mounting Type :
- Surface Mount
- Length :
- 1.035mm
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 6 Weeks
- Turn-Off Delay Time :
- 96 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 2.9A
- Threshold Voltage :
- 1V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 291pF @ 6V
- Gate to Source Voltage (Vgs) :
- 10V
- Case Connection :
- DRAIN
- Series :
- FemtoFET™
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±10V
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 500mA, 4.5V
- Turn On Delay Time :
- 39 ns
- Fall Time (Typ) :
- 315 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Datasheets
- CSD13383F4T

N-Channel Tape & Reel (TR) 44m Ω @ 500mA, 4.5V ±10V 291pF @ 6V 2.6nC @ 4.5V 3-XFDFN
CSD13383F4T Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 291pF @ 6V.This device has a continuous drain current (ID) of [2.9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=12V, the drain-source breakdown voltage is 12V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 96 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 39 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
CSD13383F4T Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 96 ns
a threshold voltage of 1V
CSD13383F4T Applications
There are a lot of Texas Instruments
CSD13383F4T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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