CSD13383F4
- Mfr.Part #
- CSD13383F4
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 2.9A 3PICOSTAR
- Stock
- 85,486
- In Stock :
- 85,486
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Series :
- FemtoFET™
- Power Dissipation-Max :
- 500mW Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Rise Time :
- 123ns
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 291pF @ 6V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 10V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±10V
- Turn-Off Delay Time :
- 96 ns
- Threshold Voltage :
- 1V
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 2.9A
- Gate Charge (Qg) (Max) @ Vgs :
- 2.6nC @ 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 315 ns
- Drain to Source Breakdown Voltage :
- 12V
- Length :
- 1.035mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Turn On Delay Time :
- 39 ns
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A Ta
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- REACH SVHC :
- No SVHC
- Base Part Number :
- CSD13383
- Factory Lead Time :
- 6 Weeks
- Vgs(th) (Max) @ Id :
- 1.25V @ 250μA
- Width :
- 635μm
- Terminal Form :
- NO LEAD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-XFDFN
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.065Ohm
- Case Connection :
- DRAIN
- Number of Channels :
- 1
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 500mA, 4.5V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- CSD13383F4

N-Channel Tape & Reel (TR) 44m Ω @ 500mA, 4.5V ±10V 291pF @ 6V 2.6nC @ 4.5V 3-XFDFN
CSD13383F4T Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 291pF @ 6V.This device has a continuous drain current (ID) of [2.9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=12V, the drain-source breakdown voltage is 12V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 96 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 39 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
CSD13383F4T Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 96 ns
a threshold voltage of 1V
CSD13383F4T Applications
There are a lot of Texas Instruments
CSD13383F4T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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