CSD13383F4
- Mfr.Part #
- CSD13383F4
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 2.9A 3PICOSTAR
- Stock
- 85,486
- In Stock :
- 85,486
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.9A Ta
- Length :
- 1.035mm
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 500mW Ta
- Terminal Form :
- NO LEAD
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 291pF @ 6V
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Series :
- FemtoFET™
- Package / Case :
- 3-XFDFN
- Threshold Voltage :
- 1V
- Gate to Source Voltage (Vgs) :
- 10V
- Drain to Source Breakdown Voltage :
- 12V
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 635μm
- Gate Charge (Qg) (Max) @ Vgs :
- 2.6nC @ 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Continuous Drain Current (ID) :
- 2.9A
- REACH SVHC :
- No SVHC
- Rise Time :
- 123ns
- Turn On Delay Time :
- 39 ns
- Terminal Position :
- BOTTOM
- Base Part Number :
- CSD13383
- Turn-Off Delay Time :
- 96 ns
- Number of Channels :
- 1
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Vgs (Max) :
- ±10V
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 1.25V @ 250μA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 315 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.065Ohm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 500mA, 4.5V
- Factory Lead Time :
- 6 Weeks
- FET Type :
- N-Channel
- Datasheets
- CSD13383F4

N-Channel Tape & Reel (TR) 44m Ω @ 500mA, 4.5V ±10V 291pF @ 6V 2.6nC @ 4.5V 3-XFDFN
CSD13383F4T Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 291pF @ 6V.This device has a continuous drain current (ID) of [2.9A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=12V, the drain-source breakdown voltage is 12V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 96 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 39 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
CSD13383F4T Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 96 ns
a threshold voltage of 1V
CSD13383F4T Applications
There are a lot of Texas Instruments
CSD13383F4T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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