CSD13381F4
- Mfr.Part #
- CSD13381F4
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 2.1A 3PICOSTAR
- Stock
- 50,000
- In Stock :
- 50,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 1.5ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Series :
- NexFET™
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 6V
- Pulsed Drain Current-Max (IDM) :
- 7A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- NO LEAD
- Terminal Position :
- BOTTOM
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn On Delay Time :
- 3.7 ns
- Package / Case :
- 3-XFDFN
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Ta
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 500mA, 4.5V
- Gate to Source Voltage (Vgs) :
- 8V
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Number of Elements :
- 1
- Width :
- 635μm
- Continuous Drain Current (ID) :
- 2.1A
- Turn-Off Delay Time :
- 11 ns
- Mounting Type :
- Surface Mount
- Length :
- 1.035mm
- Operating Mode :
- 0.85
- ECCN Code :
- EAR99
- Base Part Number :
- CSD13381
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 500mW
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.4nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 12V
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Fall Time (Typ) :
- 3.8 ns
- Power Dissipation-Max :
- 500mW Ta
- Datasheets
- CSD13381F4

N-Channel Tape & Reel (TR) 180m Ω @ 500mA, 4.5V 200pF @ 6V 1.4nC @ 4.5V 3-XFDFN
CSD13381F4 Description
This 140m Ω, 12V N-channel FemtoFET floor MOSFET technology CSD13381F4 is designed and optimized to minimize footprint in many handheld and mobile applications. This technology can replace the standard small signal MOSFET and reduce the footprint by at least 60%.
CSD13381F4 Features
? Low on-resistance
? Low Qg and Qgd
? Low threshold voltage
? Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
? Ultra-low profile
– Maximum height: 0.36-mm
? Integrated ESD protection diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
? Lead and halogen free
? RoHS compliant
CSD13381F4 Applications
? Optimized for load switch applications
? Optimized for general purpose switching applications
? Single-cell battery applications
? Handheld and mobile applications
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