CSD13306WT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.8mm

Terminal Position :

BOTTOM

Packaging :

Tape and Reel (TR)

Base Part Number :

CSD13306

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Feedback Cap-Max (Crss) :

294 pF

Number of Pins :

6

Rise Time :

11ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Continuous Drain Current (ID) :

3.5A

Rds On (Max) @ Id, Vgs :

10.2m Ω @ 1.5A, 4.5V

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 4.5V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Fall Time (Typ) :

8 ns

Pbfree Code :

yes

Number of Terminations :

6

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Terminal Form :

Ball

Gate to Source Voltage (Vgs) :

10V

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

20 ns

Height :

1mm

Vgs (Max) :

±10V

Additional Feature :

ULTRA LOW RESISTANCE

Turn On Delay Time :

7 ns

Length :

1.5mm

Thickness :

2mm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

1

Contact Plating :

Copper, Silver, Tin

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Mounting Type :

Surface Mount

Number of Channels :

1

JESD-609 Code :

e1

Series :

NexFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.9W

Lead Free :

Lead Free

Threshold Voltage :

1V

Max Junction Temperature (Tj) :

150°C

Package / Case :

6-UFBGA, DSBGA

Mount :

Surface Mount

Power Dissipation-Max :

1.9W Ta

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 6V

Drain to Source Voltage (Vdss) :

12V