CSD13306WT

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

1.9W

Length :

1.5mm

Rise Time :

11ns

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Thickness :

2mm

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

1370pF @ 6V

Pbfree Code :

yes

Number of Elements :

1

Width :

1.8mm

Series :

NexFET™

Fall Time (Typ) :

8 ns

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Base Part Number :

CSD13306

FET Type :

N-Channel

Package / Case :

6-UFBGA, DSBGA

Element Configuration :

Single

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

10V

Height :

1mm

Additional Feature :

ULTRA LOW RESISTANCE

Mount :

Surface Mount

Terminal Position :

BOTTOM

Gate Charge (Qg) (Max) @ Vgs :

11.2nC @ 4.5V

Threshold Voltage :

1V

Drain to Source Voltage (Vdss) :

12V

Number of Terminations :

6

Turn-Off Delay Time :

20 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

6

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1.3V @ 250µA

Turn On Delay Time :

7 ns

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Feedback Cap-Max (Crss) :

294 pF

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Power Dissipation-Max :

1.9W Ta

Terminal Form :

Ball

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3.5A

Rds On (Max) @ Id, Vgs :

10.2m Ω @ 1.5A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Copper, Silver, Tin