CPH5517-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

50V

Transistor Element Material :

SILICON

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Height :

900μm

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

Length :

2.9mm

Pbfree Code :

yes

Published :

2012

Max Collector Current :

1A

Transistor Application :

SWITCHING

Number of Pins :

5

JESD-609 Code :

e6

Current - Collector Cutoff (Max) :

100nA ICBO

Mounting Type :

Surface Mount

Factory Lead Time :

2 Weeks

Vce Saturation (Max) @ Ib, Ic :

430mV @ 10mA, 500mA

Pin Count :

5

Contact Plating :

Tin

Emitter Base Voltage (VEBO) :

5V

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Transition Frequency :

420MHz

Number of Elements :

2

Width :

1.6mm

RoHS Status :

ROHS3 Compliant

Max Frequency :

1MHz

Collector Emitter Breakdown Voltage :

50V

hFE Min :

200

Lead Free :

Lead Free

Configuration :

COMMON BASE, 2 ELEMENTS

Terminal Position :

Dual

Transistor Type :

NPN, PNP (Common Base)

Operating Temperature :

150°C TJ

Surface Mount :

yes

ECCN Code :

EAR99

Max Power Dissipation :

900mW

Max Breakdown Voltage :

50V

Collector Base Voltage (VCBO) :

60V

Number of Terminations :

5

Frequency - Transition :

420MHz