CPH5506-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

100nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

Polarity :

NPN, PNP

Max Power Dissipation :

1.2W

Lead Free :

Lead Free

Transition Frequency :

500MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

1.2W

Emitter Base Voltage (VEBO) :

5V

Pin Count :

5

Factory Lead Time :

7 Weeks

Frequency - Transition :

500MHz 450MHz

Packaging :

Tape and Reel (TR)

Length :

2.9mm

JESD-609 Code :

e6

Number of Pins :

5

Collector Emitter Voltage (VCEO) :

30V

hFE Min :

200

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-5 Thin, TSOT-23-5

Max Collector Current :

1.5A

Collector Emitter Breakdown Voltage :

30V

Height :

900μm

Vce Saturation (Max) @ Ib, Ic :

225mV @ 15mA, 750mA / 375mV @ 15mA, 750mA

ECCN Code :

EAR99

Number of Terminations :

5

Published :

2012

Gain Bandwidth Product :

500MHz

Number of Elements :

2

Surface Mount :

yes

Element Configuration :

Dual

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Width :

1.6mm

Max Breakdown Voltage :

30V

Contact Plating :

Tin

Collector Base Voltage (VCBO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Type :

NPN, PNP (Emitter Coupled)

Collector Emitter Saturation Voltage :

150mV

Pbfree Code :

yes