CPH3216-TL-E
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- Mfr.Part #
- CPH3216-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 1A 3CPH
- Stock
- 3,269
- In Stock ：
- 3,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e6
- Factory Lead Time :
- 10 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Length :
- 2.9mm
- Max Power Dissipation :
- 900mW
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 10mA, 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Transition Frequency :
- 420MHz
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Published :
- 2012
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Height :
- 900μm
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Max Frequency :
- 1MHz
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 130mV
- Width :
- 1.6mm
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 420MHz
- Contact Plating :
- Tin
- hFE Min :
- 200
- Datasheets
- CPH3216-TL-E
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
CPH3216-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 130mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 190mV @ 10mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 420MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
CPH3216-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 190mV @ 10mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 420MHz
CPH3216-TL-E Applications
There are a lot of ON Semiconductor
CPH3216-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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