CPH3116-TL-E
- Mfr.Part #
- CPH3116-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 1A 3CPH
- Stock
- 10,581
- In Stock :
- 10,581
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e6
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- -50V
- Max Breakdown Voltage :
- 50V
- Factory Lead Time :
- 5 Weeks
- Max Power Dissipation :
- 900mW
- Emitter Base Voltage (VEBO) :
- -5V
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 50V
- Width :
- 1.6mm
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 420MHz
- Max Collector Current :
- 1A
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Height :
- 900μm
- Transition Frequency :
- 420MHz
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- -145mV
- Vce Saturation (Max) @ Ib, Ic :
- 430mV @ 10mA, 500mA
- Length :
- 2.9mm
- hFE Min :
- 200
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Max Frequency :
- 1MHz
- Datasheets
- CPH3116-TL-E

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
CPH3116-TL-E Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -145mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 420MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 1A volts.
CPH3116-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -145mV
the vce saturation(Max) is 430mV @ 10mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 420MHz
CPH3116-TL-E Applications
There are a lot of ON Semiconductor
CPH3116-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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