CPH3116-TL-E

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

JESD-609 Code :

e6

Element Configuration :

Single

Collector Base Voltage (VCBO) :

-50V

Max Breakdown Voltage :

50V

Factory Lead Time :

5 Weeks

Max Power Dissipation :

900mW

Emitter Base Voltage (VEBO) :

-5V

Published :

2012

Collector Emitter Voltage (VCEO) :

50V

Width :

1.6mm

Surface Mount :

yes

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 100mA 2V

Number of Pins :

3

Number of Terminations :

3

Transistor Element Material :

SILICON

Gain Bandwidth Product :

420MHz

Max Collector Current :

1A

Pin Count :

3

Collector Emitter Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Height :

900μm

Transition Frequency :

420MHz

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Number of Elements :

1

Operating Temperature :

150°C TJ

Collector Emitter Saturation Voltage :

-145mV

Vce Saturation (Max) @ Ib, Ic :

430mV @ 10mA, 500mA

Length :

2.9mm

hFE Min :

200

Terminal Position :

Dual

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Max Frequency :

1MHz