CPH3122-TL-E
- Mfr.Part #
- CPH3122-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 3A 3CPH
- Stock
- 203,441
- In Stock :
- 203,441
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Power Dissipation :
- 900mW
- Emitter Base Voltage (VEBO) :
- -5V
- JESD-609 Code :
- e6
- Pbfree Code :
- yes
- Width :
- 1.6mm
- hFE Min :
- 200
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- -270mV
- Gain Bandwidth Product :
- 400MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Voltage (VCEO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 180mV @ 75mA, 1.5A
- Published :
- 2004
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 2V
- Power Dissipation :
- 900mW
- Factory Lead Time :
- 2 Weeks
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Package / Case :
- SC-96
- Collector Base Voltage (VCBO) :
- -30V
- Frequency :
- 400MHz
- Element Configuration :
- Single
- Frequency - Transition :
- 420MHz
- Mount :
- Surface Mount
- Height :
- 900μm
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- CPH3122-TL-E

PNP 150°C TJ 100nA ICBO 1 Elements PNP SC-96 Tape & Reel (TR) Surface Mount
CPH3122-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -270mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 180mV @ 75mA, 1.5A.The emitter base voltage can be kept at -5V for high efficiency.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
CPH3122-TL-E Features
the DC current gain for this device is 200 @ 500mA 2V
a collector emitter saturation voltage of -270mV
the vce saturation(Max) is 180mV @ 75mA, 1.5A
the emitter base voltage is kept at -5V
CPH3122-TL-E Applications
There are a lot of ON Semiconductor
CPH3122-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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