CPH3105-TL-E
- Mfr.Part #
- CPH3105-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A 3CPH
- Stock
- 41,353
- In Stock :
- 41,353
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- -6V
- Height :
- 900μm
- Width :
- 1.6mm
- JESD-609 Code :
- e6
- Transition Frequency :
- 360MHz
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 360MHz
- Max Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 900mW
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- -185mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 380MHz
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- -50V
- ECCN Code :
- EAR99
- Max Frequency :
- 1MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Length :
- 2.9mm
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Contact Plating :
- Tin
- hFE Min :
- 200
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Datasheets
- CPH3105-TL-E

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
CPH3105-TL-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 100mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -185mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 100mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 360MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
CPH3105-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -185mV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at -6V
a transition frequency of 360MHz
CPH3105-TL-E Applications
There are a lot of ON Semiconductor
CPH3105-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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