BUK7Y8R7-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Pins :

4

Package / Case :

SC-100, SOT-669

Input Capacitance (Ciss) (Max) @ Vds :

3159pF @ 25V

Published :

2013

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Terminal Form :

Gull wing

Power Dissipation :

147W

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

19 ns

Max Dual Supply Voltage :

60V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

MO-235

Turn-Off Delay Time :

31 ns

Pin Count :

4

Rise Time :

16ns

Surface Mount :

yes

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Turn On Delay Time :

10 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

8.7m Ω @ 20A, 10V

Number of Terminations :

4

Continuous Drain Current (ID) :

87A

Drain-source On Resistance-Max :

0.0087Ohm

Drain to Source Breakdown Voltage :

60V

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

76.2 mJ

Series :

TrenchMOS™

Power Dissipation-Max :

147W Tc