BUK7107-55AIE,118
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- Mfr.Part #
- BUK7107-55AIE,118
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- Datasheet
- Download
- Description
- NEXPERIA BUK7107 - N-CHANNEL TRE
- Stock
- 2,400
- In Stock ：
- 2,400
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- FET Type :
- N-Channel
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.007Ohm
- Drain to Source Breakdown Voltage :
- 55V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
- ECCN Code :
- EAR99
- Rise Time :
- 115ns
- Power Dissipation :
- 272W
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G4
- Max Dual Supply Voltage :
- 55V
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 111 ns
- Continuous Drain Current (ID) :
- 75A
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 272W Tc
- FET Feature :
- Current Sensing
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 116nC @ 10V
- Number of Pins :
- 5
- Number of Terminations :
- 4
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 460 mJ
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 159 ns
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 36 ns
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 50A, 10V
- Published :
- 2008
- Pin Count :
- 5
- Surface Mount :
- yes
- Datasheets
- BUK7107-55AIE,118
N-Channel Tape & Reel (TR) 7m Ω @ 50A, 10V ±20V 4500pF @ 25V 116nC @ 10V TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
BUK7107-55AIE,118 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 460 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4500pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.Using VGS=55V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 55V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 159 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 36 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 55V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7107-55AIE,118 Features
the avalanche energy rating (Eas) is 460 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 159 ns
BUK7107-55AIE,118 Applications
There are a lot of Nexperia USA Inc.
BUK7107-55AIE,118 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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