BUK7107-55ATE,118

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

460 mJ

Drain-source On Resistance-Max :

0.007Ohm

Turn On Delay Time :

36 ns

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G4

Pin Count :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

140A

Package / Case :

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

Number of Terminations :

4

Terminal Form :

Gull wing

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Element Configuration :

Single

Vgs (Max) :

±20V

Power Dissipation :

272W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Surface Mount :

yes

Power Dissipation-Max :

272W Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

JESD-609 Code :

e3

Max Dual Supply Voltage :

55V

Fall Time (Typ) :

111 ns

FET Feature :

Temperature Sensing Diode

Continuous Drain Current (ID) :

75A

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

159 ns

Drain to Source Breakdown Voltage :

55V

Contact Plating :

Tin

Number of Pins :

5

Rds On (Max) @ Id, Vgs :

7m Ω @ 50A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Rise Time :

115ns