BUK7Y7R2-60EX
- Mfr.Part #
- BUK7Y7R2-60EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 60V LFPAK56 PWR-SO8
- Stock
- 22,628
- In Stock :
- 22,628
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 4
- Package / Case :
- SC-100, SOT-669
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 33.4 ns
- Published :
- 2013
- Terminal Form :
- Gull wing
- Number of Channels :
- 1
- Rise Time :
- 18.3ns
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- MO-235
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 88.2 mJ
- Max Dual Supply Voltage :
- 60V
- Surface Mount :
- yes
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 100A
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 20 ns
- Drain to Source Resistance :
- 7.2mOhm
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 11.4 ns
- Power Dissipation-Max :
- 167W Tc
- Drain to Source Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Datasheets
- BUK7Y7R2-60EX

N-Channel Tape & Reel (TR) ±20V SC-100, SOT-669
BUK7Y7R2-60EX Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 88.2 mJ.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 33.4 ns.MOSFETs have 7.2mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (10V).
BUK7Y7R2-60EX Features
the avalanche energy rating (Eas) is 88.2 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 33.4 ns
single MOSFETs transistor is 7.2mOhm
BUK7Y7R2-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y7R2-60EX applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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