BUK7Y29-40EX
- Mfr.Part #
- BUK7Y29-40EX
- Manufacturer
- Nexperia
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 26A LFPAK56
- Stock
- 46,003
- In Stock :
- 46,003
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 8.7 mJ
- Power Dissipation :
- 37W
- JEDEC-95 Code :
- MO-235
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.029Ohm
- Turn-Off Delay Time :
- 6 ns
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- SC-100, SOT-669
- Fall Time (Typ) :
- 5.1 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 7.9nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Series :
- TrenchMOS™
- Drain to Source Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Power Dissipation-Max :
- 37W Tc
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- AVALANCHE RATED
- Turn On Delay Time :
- 4.2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 26A Tc
- Number of Channels :
- 1
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 5A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 492pF @ 25V
- Max Dual Supply Voltage :
- 40V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 26A
- Published :
- 2013
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 5.5ns
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 4
- Datasheets
- BUK7Y29-40EX

N-Channel Tape & Reel (TR) 29m Ω @ 5A, 10V ±20V 492pF @ 25V 7.9nC @ 10V SC-100, SOT-669
BUK7Y29-40EX Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 8.7 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 492pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 6 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 4.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 40V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7Y29-40EX Features
the avalanche energy rating (Eas) is 8.7 mJ
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 6 ns
BUK7Y29-40EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y29-40EX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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