BUK7Y12-100EX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Package / Case :

SC-100, SOT-669

Operating Mode :

ENHANCEMENT MODE

Published :

2013

Time@Peak Reflow Temperature-Max (s) :

30

Pin Count :

4

Number of Pins :

4

Case Connection :

DRAIN

Surface Mount :

yes

Vgs (Max) :

±20V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Max Dual Supply Voltage :

100V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

238W Tc

FET Type :

N-Channel

JESD-609 Code :

e3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

5067pF @ 25V

Rise Time :

18ns

Turn-Off Delay Time :

66 ns

Number of Terminations :

4

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

85A Tc

Drain to Source Breakdown Voltage :

100V

Rds On (Max) @ Id, Vgs :

12m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

238W

Transistor Element Material :

SILICON

Turn On Delay Time :

12 ns

Factory Lead Time :

12 Weeks

Series :

TrenchMOS™

Pulsed Drain Current-Max (IDM) :

339A

JEDEC-95 Code :

MO-235

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

66 ns

Continuous Drain Current (ID) :

85A