BUK7M9R9-60EX

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 1mA

Reference Standard :

AEC-Q101; IEC-60134

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G4

Power Dissipation-Max :

79W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

240A

Factory Lead Time :

26 Weeks

Mount :

Surface Mount

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0099Ohm

Avalanche Energy Rating (Eas) :

45.4 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

30.1nC @ 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Mounting Type :

Surface Mount

Series :

Automotive, AEC-Q101, TrenchMOS™

Package / Case :

SOT-1210, 8-LFPAK33

Continuous Drain Current (ID) :

60A

Transistor Element Material :

SILICON

Published :

2016

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2007pF @ 25V

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

9.9m Ω @ 15A, 10V