BUK7M67-60EX
- Mfr.Part #
- BUK7M67-60EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 14A LFPAK33
- Stock
- 1,378
- In Stock :
- 1,378
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 31W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Package / Case :
- SOT-1210, 8-LFPAK33
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 67m Ω @ 5A, 10V
- Mount :
- Surface Mount
- Avalanche Energy Rating (Eas) :
- 4 mJ
- Pulsed Drain Current-Max (IDM) :
- 58A
- Mounting Type :
- Surface Mount
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 6.7nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Published :
- 2016
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Factory Lead Time :
- 26 Weeks
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.067Ohm
- Drain to Source Voltage (Vdss) :
- 60V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Reference Standard :
- AEC-Q101; IEC-60134
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 334pF @ 25V
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 60V
- Pin Count :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 14A
- Datasheets
- BUK7M67-60EX

N-Channel Tape & Reel (TR) 67m Ω @ 5A, 10V ±20V 334pF @ 25V 6.7nC @ 10V 60V SOT-1210, 8-LFPAK33
BUK7M67-60EX Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 334pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.A maximum pulsed drain current of 58A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
BUK7M67-60EX Features
the avalanche energy rating (Eas) is 4 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 58A.
a 60V drain to source voltage (Vdss)
BUK7M67-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M67-60EX applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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