BUK7M15-60EX
- Mfr.Part #
- BUK7M15-60EX
- Manufacturer
- Nexperia
- Package / Case
- SOT-1210, 8-LFPAK33
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 42.9A LFPAK33
- Stock
- 39,021
- In Stock :
- 39,021
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pin Count :
- 8
- Number of Terminations :
- 4
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 10A, 10V
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.015Ohm
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drain to Source Voltage (Vdss) :
- 60V
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 26.5 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 60V
- Factory Lead Time :
- 26 Weeks
- Operating Temperature :
- -55°C~175°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2016
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 171A
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 42.9A
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation-Max :
- 62W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 19.4nC @ 10V
- JESD-30 Code :
- R-PSSO-G4
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Reference Standard :
- AEC-Q101; IEC-60134
- Package / Case :
- SOT-1210, 8-LFPAK33
- Drain Current-Max (Abs) (ID) :
- 43A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 1262pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 42.9A Tc
- Datasheets
- BUK7M15-60EX

N-Channel Tape & Reel (TR) 15m Ω @ 10A, 10V ±20V 1262pF @ 25V 19.4nC @ 10V 60V SOT-1210, 8-LFPAK33
BUK7M15-60EX Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 26.5 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1262pF @ 25V.This device conducts a continuous drain current (ID) of 42.9A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 43A.Pulsed drain current is maximum rated peak drain current 171A.A normal operation of the DS requires keeping the breakdown voltage above 60V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7M15-60EX Features
the avalanche energy rating (Eas) is 26.5 mJ
a continuous drain current (ID) of 42.9A
based on its rated peak drain current 171A.
a 60V drain to source voltage (Vdss)
BUK7M15-60EX Applications
There are a lot of Nexperia USA Inc.
BUK7M15-60EX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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