BUK78150-55A/CUF
- Mfr.Part #
- BUK78150-55A/CUF
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 5.5A SOT223
- Stock
- 3,964
- In Stock :
- 3,964
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- TrenchMOS™
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 26ns
- Drain to Source Voltage (Vdss) :
- 55V
- Fall Time (Typ) :
- 10 ns
- Turn-Off Delay Time :
- 8 ns
- Pulsed Drain Current-Max (IDM) :
- 22A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Power Dissipation-Max :
- 8W Tc
- Drain-source On Resistance-Max :
- 0.15Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 230pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2010
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 3 ns
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Tin
- Number of Pins :
- 4
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Continuous Drain Current (ID) :
- 5.5A
- Factory Lead Time :
- 16 Weeks
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-261-4, TO-261AA
- Number of Terminations :
- 4
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 55V
- Datasheets
- BUK78150-55A/CUF

N-Channel Tape & Reel (TR) 150m Ω @ 5A, 10V ±20V 230pF @ 25V 55V TO-261-4, TO-261AA
BUK78150-55A/CUF Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 25 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 230pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 5.5A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 8 ns.Peak drain current is 22A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 55V.For this transistor to work, a voltage 55V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
BUK78150-55A/CUF Features
the avalanche energy rating (Eas) is 25 mJ
a continuous drain current (ID) of 5.5A
the turn-off delay time is 8 ns
based on its rated peak drain current 22A.
a 55V drain to source voltage (Vdss)
BUK78150-55A/CUF Applications
There are a lot of Nexperia USA Inc.
BUK78150-55A/CUF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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