BUK755R4-100E127

Manufacturer :

Philips

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Power Dissipation-Max :

349W Tc

Turn-Off Delay Time :

158 ns

Case Connection :

DRAIN

Surface Mount :

No

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Pin Count :

3

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101, TrenchMOS™

Turn On Delay Time :

37 ns

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Fall Time (Typ) :

80 ns

Vgs(th) (Max) @ Id :

4V @ 1mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Packaging :

Tube

Drain-source On Resistance-Max :

0.0052Ohm

Continuous Drain Current (ID) :

120A

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

11810pF @ 25V

Additional Feature :

AVALANCHE RATED

Max Dual Supply Voltage :

100V

Published :

2012

Rise Time :

62ns

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.2m Ω @ 25A, 10V

Package / Case :

TO-220-3

Number of Pins :

3

Weight :

6.000006g

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc