BUK7526-100B,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

26m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Surface Mount :

No

Number of Elements :

1

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

197A

Drain Current-Max (Abs) (ID) :

49A

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 1mA

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Series :

TrenchMOS™

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.026ohm

ECCN Code :

EAR99

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Power Dissipation-Max :

157W Tc

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2891pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

144 mJ

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE