BUK7227-100B,118
- Mfr.Part #
- BUK7227-100B,118
- Manufacturer
- Nexperia
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 48A DPAK
- Stock
- 5,332
- In Stock :
- 5,332
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.027Ohm
- DS Breakdown Voltage-Min :
- 100V
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 196A
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 48A
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 25A, 10V
- JEDEC-95 Code :
- TO-252AA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2789pF @ 25V
- Factory Lead Time :
- 26 Weeks
- Terminal Form :
- Gull wing
- Terminal Position :
- Single
- Series :
- Automotive, AEC-Q101, TrenchMOS™
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Surface Mount :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Temperature :
- -55°C~185°C TJ
- HTS Code :
- 8541.29.00.75
- Power Dissipation-Max :
- 167W Tc
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 145 mJ
- Reach Compliance Code :
- not_compliant
- Published :
- 2011
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Application :
- SWITCHING
- Datasheets
- BUK7227-100B,118

N-Channel Tape & Reel (TR) 27m Ω @ 25A, 10V ±20V 2789pF @ 25V 37nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
BUK7227-100B,118 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 145 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2789pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 48A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 196A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
BUK7227-100B,118 Features
the avalanche energy rating (Eas) is 145 mJ
based on its rated peak drain current 196A.
a 100V drain to source voltage (Vdss)
BUK7227-100B,118 Applications
There are a lot of Nexperia USA Inc.
BUK7227-100B,118 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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