BTS115ANKSA1

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Mfr.Part #
BTS115ANKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 50V 15.5A TO220AB
Stock
6,500
In Stock :
6,500

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
RoHS Compliant
DS Breakdown Voltage-Min :
50V
Case Connection :
DRAIN
Continuous Drain Current (ID) :
15.5A
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Terminal Position :
Single
Additional Feature :
LOGIC LEVEL COMPATIBLE
Vgs(th) (Max) @ Id :
2.5V @ 1mA
Operating Temperature :
-55°C~150°C TJ
Series :
TEMPFET®
Packaging :
Tube
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Package / Case :
TO-220-3
Drain to Source Voltage (Vdss) :
50V
Number of Elements :
1
Pulsed Drain Current-Max (IDM) :
62A
Mount :
Through Hole
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Rds On (Max) @ Id, Vgs :
120m Ω @ 7.8A, 4.5V
Number of Pins :
3
Mounting Type :
Through Hole
Published :
2000
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.12Ohm
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
735pF @ 25V
Vgs (Max) :
±10V
Power Dissipation-Max :
50W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
15.5A Tc
Datasheets
BTS115ANKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BTS115ANKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, BTS115ANKSA1 pinout, BTS115ANKSA1 datasheet PDF, BTS115ANKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BTS115ANKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BTS115ANKSA1


N-Channel Tube 120m Ω @ 7.8A, 4.5V ±10V 735pF @ 25V 50V TO-220-3

BTS115ANKSA1 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 735pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 62A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 50V, it should remain above the 50V level.The transistor must receive a 50V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V).

BTS115ANKSA1 Features


a continuous drain current (ID) of 15.5A
based on its rated peak drain current 62A.
a 50V drain to source voltage (Vdss)


BTS115ANKSA1 Applications


There are a lot of Infineon Technologies
BTS115ANKSA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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