BTS113AE3064NKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Drain-source On Resistance-Max :

0.17Ohm

FET Type :

N-Channel

Published :

2000

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Packaging :

Tube

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

40W Tc

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Vgs (Max) :

±10V

Case Connection :

DRAIN

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

11.5A

RoHS Status :

Non-RoHS Compliant

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Series :

TEMPFET®

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

170m Ω @ 5.8A, 4.5V

Pulsed Drain Current-Max (IDM) :

46A

DS Breakdown Voltage-Min :

60V

Terminal Position :

Single