BTS114AE3045A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.1 Ω

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Series :

TEMPFET®

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Pin Count :

3

FET Feature :

-

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Number of Terminals :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

68 A

Mounting Type :

Surface Mount

Package :

Bulk

DS Breakdown Voltage-Min :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Manufacturer :

Rochester Electronics LLC

Technology :

MOSFET (Metal Oxide)

Terminal Finish :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

Power Dissipation (Max) :

50W

Drain to Source Voltage (Vdss) :

50 V

Product Status :

Obsolete

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Vgs (Max) :

±20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

100mOhm @ 9A, 10V

Surface Mount :

yes

Supplier Device Package :

PG-TO220-3-5

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

17A (Tc)

Number of Elements :

1