BTS114AE3045A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.1 Ω

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Reach Compliance Code :

Unknown

Package Shape :

RECTANGULAR

Manufacturer :

Rochester Electronics LLC

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

100mOhm @ 9A, 10V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Drain to Source Voltage (Vdss) :

50 V

Pulsed Drain Current-Max (IDM) :

68 A

Current - Continuous Drain (Id) @ 25°C :

17A (Tc)

Supplier Device Package :

PG-TO220-3-5

DS Breakdown Voltage-Min :

50 V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Number of Terminals :

2

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Series :

TEMPFET®

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Technology :

MOSFET (Metal Oxide)

Terminal Finish :

NOT SPECIFIED

Power Dissipation (Max) :

50W

Case Connection :

DRAIN

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Elements :

1

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Package :

Bulk