BTS114AE3045A

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Mfr.Part #
BTS114AE3045A
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
4,000
In Stock :
4,000

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain-source On Resistance-Max :
0.1 Ω
Polarity/Channel Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
600 pF @ 25 V
FET Feature :
-
Drive Voltage (Max Rds On, Min Rds On) :
10V
Reach Compliance Code :
Unknown
Package Shape :
RECTANGULAR
Manufacturer :
Rochester Electronics LLC
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
100mOhm @ 9A, 10V
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
FET Type :
N-Channel
Vgs (Max) :
±20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Pin Count :
3
Drain to Source Voltage (Vdss) :
50 V
Pulsed Drain Current-Max (IDM) :
68 A
Current - Continuous Drain (Id) @ 25°C :
17A (Tc)
Supplier Device Package :
PG-TO220-3-5
DS Breakdown Voltage-Min :
50 V
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Number of Terminals :
2
Qualification Status :
COMMERCIAL
Surface Mount :
yes
Series :
TEMPFET®
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Technology :
MOSFET (Metal Oxide)
Terminal Finish :
NOT SPECIFIED
Power Dissipation (Max) :
50W
Case Connection :
DRAIN
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Terminal Form :
Gull wing
Number of Elements :
1
Operating Temperature :
-55°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id :
3.5V @ 1mA
Package :
Bulk
Datasheets
BTS114AE3045A
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BTS114AE3045A from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C ~ 150°C (TJ), BTS114AE3045A pinout, BTS114AE3045A datasheet PDF, BTS114AE3045A amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BTS114AE3045A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BTS114AE3045A


MOSFET (Metal Oxide) N-Channel 100mOhm @ 9A, 10V ±20V 600 pF @ 25 V 50 V TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BTS114AE3045A Overview


A device's maximal input capacitance is 600 pF @ 25 V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 68 A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 50 V.This transistor requires a 50 V drain to source voltage (Vdss).

BTS114AE3045A Features


based on its rated peak drain current 68 A.
a 50 V drain to source voltage (Vdss)


BTS114AE3045A Applications


There are a lot of Infineon
BTS114AE3045A applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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