BSZ22DN20NS3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 13μA

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

8

Power Dissipation-Max :

34W Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Series :

OptiMOS™

Continuous Drain Current (ID) :

7A

Number of Terminations :

5

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

34W

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 100V

Number of Elements :

1

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Number of Pins :

8

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

30 mJ

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

8-PowerTDFN

Max Dual Supply Voltage :

200V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

225m Ω @ 3.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

JESD-30 Code :

S-PDSO-N5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.225Ohm

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Published :

2011

Terminal Position :

Dual

Rise Time :

4ns

Halogen Free :

Halogen Free