BSZ22DN20NS3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 13uA

Transistor Type :

1 N-Channel

Width :

3.3 mm

Product Category :

MOSFET

FET Type :

N Channel

Packaging :

Tape and Reel (TR)

Length :

3.3 mm

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

225mΩ @ 3.5A, 10V

Technology :

Si

Product Type :

MOSFET

RoHS :

Details

Continuous Drain Current (Id) @ 25°C :

7A Tc

Drain to Source Voltage (Vdss) :

200V

Configuration :

Single

Subcategory :

MOSFETs

RoHS Status :

RoHS Compliant

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

Rise Time :

4 ns

Power Dissipation-Max (Ta=25°C) :

34W Tc

Package / Case :

PG-TSDSON-8

Mounting Style :

SMD/SMT

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Infineon

Brand :

Infineon Technologies

Minimum Operating Temperature :

- 55 C

Height :

1.1 mm