BSZ215CHXTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3.2A

Drain-source On Resistance-Max :

0.055Ohm

Max Dual Supply Voltage :

-20V

Factory Lead Time :

18 Weeks

Max Power Dissipation :

2.5W

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

20A

Avalanche Energy Rating (Eas) :

11 mJ

FET Type :

N and P-Channel Complementary

JESD-609 Code :

e3

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

2.8nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Logic Level Gate, 2.5V Drive

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Lead Free :

Lead Free

Terminal Form :

NO LEAD

Vgs(th) (Max) @ Id :

1.4V @ 110μA

Number of Elements :

2

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

5.1A 3.2A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5.1A

Packaging :

Tape and Reel (TR)

Series :

Automotive, AEC-Q101, OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Rds On (Max) @ Id, Vgs :

55m Ω @ 5.1A, 4.5V

JESD-30 Code :

S-PDSO-N5

Number of Terminations :

5

Halogen Free :

Halogen Free

Additional Feature :

AVALANCHE RATED

Published :

2014

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE