BSS87,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

400mA

Power Dissipation-Max :

580mW Ta 12.5W Tc

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.4A

Turn-Off Delay Time :

49 ns

Drain to Source Breakdown Voltage :

200V

RoHS Status :

ROHS3 Compliant

Width :

2.6mm

Number of Elements :

1

Resistance :

3Ohm

Rds On (Max) @ Id, Vgs :

3 Ω @ 400mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Max Dual Supply Voltage :

200V

REACH SVHC :

No SVHC

Package / Case :

TO-243AA

Turn On Delay Time :

6 ns

Contact Plating :

Tin

Number of Terminations :

3

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Threshold Voltage :

2.8V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Factory Lead Time :

4 Weeks

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

Transistor Element Material :

SILICON

FET Type :

N-Channel

Published :

2013

Vgs (Max) :

±20V

Lead Free :

Lead Free

Power Dissipation :

1W

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Number of Pins :

3

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 25V

Weight :

4.535924g

Length :

4.6mm

Pin Count :

3

Element Configuration :

Single

Height :

1.6mm

ECCN Code :

EAR99