BSS84PWH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

6.7 ns

Width :

1.25mm

Terminal Position :

Dual

Voltage - Rated DC :

-60V

Mount :

Surface Mount

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Number of Terminations :

3

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

19.1pF @ 25V

Current Rating :

-150mA

Mounting Type :

Surface Mount

Power Dissipation-Max :

300mW Ta

Halogen Free :

Halogen Free

Factory Lead Time :

10 Weeks

Max Dual Supply Voltage :

-60V

Number of Pins :

3

Height :

1mm

Rds On (Max) @ Id, Vgs :

8 Ω @ 150mA, 10V

ECCN Code :

EAR99

Length :

2mm

Element Configuration :

Single

Lead Free :

Lead Free

Continuous Drain Current (ID) :

-150mA

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

8Ohm

Series :

SIPMOS®

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Packaging :

Cut Tape (CT)

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2V @ 20μA

Published :

2000

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

20.5 ns

Max Junction Temperature (Tj) :

150°C

Drain to Source Breakdown Voltage :

-60V

Turn-Off Delay Time :

8.6 ns

Number of Channels :

1

Pbfree Code :

yes

Vgs (Max) :

±20V

Number of Elements :

1

Power Dissipation :

300mW

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Rise Time :

16.2ns

Package / Case :

SC-70, SOT-323

Terminal Form :

Gull wing