BSS84PH6433XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2002

Transistor Element Material :

SILICON

FET Type :

P-Channel

Rise Time :

16.2ns

Length :

2.9mm

Terminal Form :

Gull wing

Contact Plating :

Tin

Vgs (Max) :

±20V

Number of Elements :

1

Number of Channels :

1

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

2V @ 20μA

Height :

1.1mm

Turn On Delay Time :

6.7 ns

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-60V

ECCN Code :

EAR99

Series :

SIPMOS®

Fall Time (Typ) :

20.5 ns

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

19pF @ 25V

Turn-Off Delay Time :

8.6 ns

Power Dissipation :

360mW

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Number of Pins :

3

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

-170mA

Transistor Application :

SWITCHING

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

8Ohm

Operating Temperature :

-55°C~150°C TJ

Width :

1.3mm

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 10V

Rds On (Max) @ Id, Vgs :

8 Ω @ 170mA, 10V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Radiation Hardening :

No

Element Configuration :

Single

Power Dissipation-Max :

360mW Ta

RoHS Status :

ROHS3 Compliant