BSS84LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

225mW

Current - Continuous Drain (Id) @ 25°C :

130mA Ta

Height :

1.016mm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA

REACH SVHC :

No SVHC

Number of Pins :

3

Pbfree Code :

yes

Halogen Free :

Halogen Free

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

23 Weeks

Surface Mount :

yes

Voltage - Rated DC :

-50V

Length :

3.0226mm

Radiation Hardening :

No

Number of Terminations :

3

Turn On Delay Time :

3.6 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

130mA

Width :

1.397mm

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 5V

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Turn-Off Delay Time :

16 ns

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Published :

2004

Rise Time :

1ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Contact Plating :

Tin

Terminal Position :

Dual

Current Rating :

-130mA

Time@Peak Reflow Temperature-Max (s) :

10

Mounting Type :

Surface Mount

Resistance :

10Ohm

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

5V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

50V

Fall Time (Typ) :

1 ns

Threshold Voltage :

-2V

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Nominal Vgs :

2 V

Rds On (Max) @ Id, Vgs :

10 Ω @ 100mA, 5V

Power Dissipation-Max :

225mW Ta

Number of Elements :

1