BSS84AKM,315

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Power Dissipation-Max :

340mW Ta 2.7W Tc

Surface Mount :

yes

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

48 ns

Ambient Temperature Range High :

150°C

Drain to Source Breakdown Voltage :

-50V

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Position :

BOTTOM

Package / Case :

SC-101, SOT-883

Max Junction Temperature (Tj) :

150°C

Vgs (Max) :

±20V

Number of Pins :

3

Transistor Application :

SWITCHING

Power Dissipation :

340mW

Time@Peak Reflow Temperature-Max (s) :

30

Max Dual Supply Voltage :

-50V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Height :

500μm

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-230mA

Number of Terminations :

3

Turn On Delay Time :

13 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

7.5 Ω @ 100mA, 10V

Fall Time (Typ) :

25 ns

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Rise Time :

11ns

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 25V

FET Type :

P-Channel

Series :

Automotive, AEC-Q101, TrenchMOS™

Drain-source On Resistance-Max :

8.5Ohm

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

50V

Peak Reflow Temperature (Cel) :

260

Published :

2011

Gate Charge (Qg) (Max) @ Vgs :

0.35nC @ 5V

Number of Elements :

1