BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 50V 130MA 300MW 10R@5V,100MA 2V@
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 10 ns
- Continuous Drain Current (ID) :
- 130mA
- Min Operating Temperature :
- -55°C
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 360mW Ta
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Fall Time (Typ) :
- 6.3 ns
- Turn On Delay Time :
- 2.5 ns
- Height :
- 930μm
- Drain to Source Breakdown Voltage :
- -50V
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 6.3ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Termination :
- SMD/SMT
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- -1.7V
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Number of Elements :
- 1
- Voltage :
- 50V
- Length :
- 2.92mm
- Mount :
- Surface Mount
- Factory Lead Time :
- 8 Weeks
- Dual Supply Voltage :
- -50V
- Drain to Source Resistance :
- 10Ohm
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 10Ohm
- Power Dissipation :
- 360mW
- Input Capacitance :
- 73pF
- Current :
- 13A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.05mm
- Mounting Type :
- Surface Mount
- Supplier Device Package :
- SOT-23-3
- Rds On Max :
- 10 Ω
- Voltage - Rated DC :
- -50V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Nominal Vgs :
- -1.7 V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Drain to Source Voltage (Vdss) :
- 50V
- Current Rating :
- -130mA
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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