BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- UTD Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- 50V 130MA 300MW 10R@5V,100MA 2V@
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- UTD Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- FET Type :
- P-Channel
- Current Rating :
- -130mA
- Packaging :
- Tape and Reel (TR)
- Rds On Max :
- 10 Ω
- Dual Supply Voltage :
- -50V
- Length :
- 2.92mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -50V
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 130mA
- Nominal Vgs :
- -1.7 V
- Power Dissipation :
- 360mW
- Threshold Voltage :
- -1.7V
- Mount :
- Surface Mount
- Input Capacitance :
- 73pF
- Rise Time :
- 6.3ns
- Power Dissipation-Max :
- 360mW Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Drain to Source Breakdown Voltage :
- -50V
- Current :
- 13A
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 10Ohm
- Vgs (Max) :
- ±20V
- Termination :
- SMD/SMT
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Drain to Source Voltage (Vdss) :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Voltage :
- 50V
- Supplier Device Package :
- SOT-23-3
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 6.3 ns
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2013
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Height :
- 930μm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Drain to Source Resistance :
- 10Ohm
- Turn-Off Delay Time :
- 10 ns
- Width :
- 3.05mm
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Turn On Delay Time :
- 2.5 ns
- Max Operating Temperature :
- 150°C
- Min Operating Temperature :
- -55°C
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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