BSS84
- Mfr.Part #
- BSS84
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 50V 130MA DIE
- Stock
- 2,269
- In Stock :
- 2,269
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 10Ohm
- Power Dissipation-Max :
- 360mW Ta
- Vgs (Max) :
- ±20V
- Rds On Max :
- 10 Ω
- Drain to Source Breakdown Voltage :
- -50V
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current - Continuous Drain (Id) @ 25°C :
- 130mA Ta
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn-Off Delay Time :
- 10 ns
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Resistance :
- 10Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 73pF @ 25V
- Continuous Drain Current (ID) :
- 130mA
- Max Operating Temperature :
- 150°C
- Termination :
- SMD/SMT
- Drain to Source Voltage (Vdss) :
- 50V
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Input Capacitance :
- 73pF
- Threshold Voltage :
- -1.7V
- Supplier Device Package :
- SOT-23-3
- Current :
- 13A
- Voltage - Rated DC :
- -50V
- Nominal Vgs :
- -1.7 V
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Turn On Delay Time :
- 2.5 ns
- Rise Time :
- 6.3ns
- Current Rating :
- -130mA
- Width :
- 3.05mm
- Fall Time (Typ) :
- 6.3 ns
- Mount :
- Surface Mount
- Length :
- 2.92mm
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 1.3nC @ 5V
- Mounting Type :
- Surface Mount
- Voltage :
- 50V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Rds On (Max) @ Id, Vgs :
- 10Ohm @ 100mA, 5V
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Height :
- 930μm
- Power Dissipation :
- 360mW
- Dual Supply Voltage :
- -50V
- Datasheets
- BSS84
P-Channel Tape & Reel (TR) 10Ohm @ 100mA, 5V ±20V 73pF @ 25V 1.3nC @ 5V 50V TO-236-3, SC-59, SOT-23-3
BSS84 Description
This P-channel enhancement-mode field-effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This high-density process minimizes on-state resistance and provides rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
BSS84 Features
-0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V
Voltage-Controlled P-Channel Small-Signal Switch
High-Density Cell Design for Low RDS(ON)
High Saturation Current
BSS84 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
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