BSS64E6327
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- Mfr.Part #
- BSS64E6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL N-CHANNEL MOSFET
- Stock
- 60,000
- In Stock ：
- 60,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- COMMERCIAL
- Package Shape :
- RECTANGULAR
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-PDSO-G3
- Polarity/Channel Type :
- NPN
- Collector Current-Max (IC) :
- 0.8 A
- Package :
- Bulk
- Number of Terminals :
- 3
- Collector-Emitter Voltage-Max :
- 80 V
- Frequency - Transition :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4mA, 1V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100
- Supplier Device Package :
- SOT-23
- Power - Max :
- 330 mW
- Series :
- -
- Mounting Type :
- Surface Mount
- Product Status :
- Active
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 400μA, 4mA
- Transistor Polarity :
- NPN
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Continuous Collector Current :
- 800
- DC Current Gain-Min (hFE) :
- 20
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 800 mA
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) :
- 80 V
- Surface Mount :
- yes
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Manufacturer :
- Rochester Electronics LLC
- Operating Temperature :
- 150°C (TJ)
- Datasheets
- BSS64E6327
NPN 150°C (TJ) 100nA (ICBO) 1 Elements SILICON NPN TO-236-3, SC-59, SOT-23-3 Surface Mount
BSS64E6327 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4mA, 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 800.There is a transition frequency of 100 in the part.There is no device package available from the supplier for this product.80 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
BSS64E6327 Features
the DC current gain for this device is 20 @ 4mA, 1V
the vce saturation(Max) is 700mV @ 400μA, 4mA
a transition frequency of 100
the supplier device package of SOT-23
BSS64E6327 Applications
There are a lot of Infineon Technologies
BSS64E6327 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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