BSS63,215
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- Mfr.Part #
- BSS63,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 100MA SOT23
- Stock
- 3,096
- In Stock ：
- 3,096
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 30
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 85MHz
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- BSS63
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 25mA 1V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Transition Frequency :
- 85MHz
- Frequency :
- 85MHz
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 2.5mA, 25mA
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 110V
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Transistor Type :
- PNP
- Published :
- 2006
- JESD-609 Code :
- e3
- Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Max Power Dissipation :
- 250mW
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BSS63,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BSS63,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 30 @ 25mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 85MHz in the part.Single BJT transistor can be broken down at a voltage of 100V volts.When collector current reaches its maximum, it can reach 100mA volts.
BSS63,215 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 250mV @ 2.5mA, 25mA
the emitter base voltage is kept at 6V
a transition frequency of 85MHz
BSS63,215 Applications
There are a lot of Nexperia USA Inc.
BSS63,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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