BSS63,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

85MHz

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

100nA ICBO

Factory Lead Time :

4 Weeks

Number of Terminations :

3

Max Breakdown Voltage :

100V

JESD-609 Code :

e3

Polarity/Channel Type :

PNP

Power Dissipation :

250mW

Lead Free :

Lead Free

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Number of Elements :

1

Collector Base Voltage (VCBO) :

110V

Collector Emitter Breakdown Voltage :

100V

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

250mV @ 2.5mA, 25mA

Emitter Base Voltage (VEBO) :

6V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Transition Frequency :

85MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 25mA 1V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Collector Current :

100mA

Max Power Dissipation :

250mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

85MHz

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Published :

2006

Radiation Hardening :

No

hFE Min :

30

Transistor Element Material :

SILICON

Terminal Position :

Dual

Number of Pins :

3

Base Part Number :

BSS63

Pin Count :

3

Transistor Type :

PNP

Collector Emitter Voltage (VCEO) :

100V

REACH SVHC :

No SVHC

Series :

Automotive, AEC-Q101

Terminal Form :

Gull wing