BSP52T3
- Mfr.Part #
- BSP52T3
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A SOT223
- Stock
- 47,017
- In Stock :
- 47,017
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Current Rating :
- 1A
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- 1.3V
- Base Part Number :
- BSP52
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Polarity :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Radiation Hardening :
- No
- Length :
- 6.5mm
- Number of Elements :
- 1
- Height :
- 1.57mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 90V
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 80V
- Packaging :
- Tape and Reel (TR)
- Published :
- 1997
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 4
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Factory Lead Time :
- 11 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Power Dissipation :
- 1.25W
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN - Darlington
- Number of Pins :
- 4
- Max Power Dissipation :
- 800mW
- Collector Emitter Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Current - Collector Cutoff (Max) :
- 10μA
- Case Connection :
- COLLECTOR
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 80V
- Width :
- 3.5mm
- Operating Temperature :
- -65°C~150°C TJ
- Pin Count :
- 4
- Datasheets
- BSP52T3

NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP52T3G Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
BSP52T3G Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
BSP52T3G Applications
There are a lot of ON Semiconductor
BSP52T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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