BSP50E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Series :

-

Surface Mount :

yes

Polarity/Channel Type :

NPN

Reach Compliance Code :

Unknown

Collector-Emitter Voltage-Max :

45 V

Package Shape :

RECTANGULAR

Transistor Type :

NPN - Darlington

Supplier Device Package :

PG-SOT223-4

Transistor Element Material :

SILICON

Product Status :

Active

Terminal Form :

Gull wing

Package :

Bulk

Configuration :

Darlington

Manufacturer :

Siemens

JESD-30 Code :

R-PDSO-G4

Current - Collector (Ic) (Max) :

1 A

Case Connection :

COLLECTOR

Frequency - Transition :

200MHz

Power - Max :

1.5 W

DC Current Gain-Min (hFE) :

2000

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 1mA, 1A

Current - Collector Cutoff (Max) :

10μA

Terminal Position :

Dual

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

45 V

Collector Current-Max (IC) :

1 A

Operating Temperature :

150°C (TJ)

Number of Elements :

1

Number of Terminals :

4

Package / Case :

TO-261-4, TO-261AA

Mounting Type :

Surface Mount

ECCN Code :

EAR99