BSP52

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-55°C~150°C TJ

Width :

3.56mm

Voltage - Rated DC :

10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Current Rating :

1A

Collector Emitter Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

5V

Height :

1.6mm

Mounting Type :

Surface Mount

Number of Pins :

4

Collector Base Voltage (VCBO) :

90V

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Collector Emitter Saturation Voltage :

1.3V

Max Breakdown Voltage :

80V

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

80V

ECCN Code :

EAR99

Contact Plating :

Tin

Length :

6.5mm

Power Dissipation :

1W

Max Power Dissipation :

1W

Weight :

188mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Type :

NPN - Darlington

hFE Min :

2000

Base Part Number :

BSP52

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500μA, 500mA

Mount :

Surface Mount

Number of Terminations :

4

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

10μA

Terminal Form :

Gull wing

Polarity :

NPN

Radiation Hardening :

No

Transition Frequency :

200MHz

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Max Collector Current :

800mA

Published :

1997

Element Configuration :

Single

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA