BSP52,115
- Mfr.Part #
- BSP52,115
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A SOT223
- Stock
- 1,601
- In Stock :
- 1,601
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Frequency - Transition :
- 200MHz
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Surface Mount :
- yes
- Polarity :
- NPN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Base Part Number :
- BSP52
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 50nA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Current - Collector (Ic) (Max) :
- 1A
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 4
- Published :
- 1999
- Terminal Position :
- Dual
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Transition Frequency :
- 200MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Power Dissipation :
- 1.25W
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PDSO-G4
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- BSP52,115

NPN - Darlington 150°C TJ 50nA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
BSP52,115 Overview
In this device, the DC current gain is 2000 @ 500mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 500μA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
BSP52,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
a transition frequency of 200MHz
BSP52,115 Applications
There are a lot of Nexperia USA Inc.
BSP52,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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