BS170P
- Mfr.Part #
- BS170P
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 270MA TO92-3
- Stock
- 909
- In Stock :
- 909
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Weight :
- 453.59237mg
- Current - Continuous Drain (Id) @ 25°C :
- 270mA Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 60V
- Terminal Form :
- Wire
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 625mW
- Power Dissipation-Max :
- 625mW Ta
- Width :
- 1.4mm
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 1997
- Drain Current-Max (Abs) (ID) :
- 0.27A
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Mount :
- Surface Mount, Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Factory Lead Time :
- 17 Weeks
- Threshold Voltage :
- 3V
- Current Rating :
- 270mA
- Number of Channels :
- 1
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 5Ohm
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.1mm
- Transistor Element Material :
- SILICON
- Length :
- 3mm
- Drain to Source Breakdown Voltage :
- 60V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Contact Plating :
- Tin
- Turn On Delay Time :
- 10 ns
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 270mA
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 200mA, 10V
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 10 ns
- Nominal Vgs :
- 3 V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BS170P

N-Channel Bulk 5 Ω @ 200mA, 10V ±20V 60pF @ 10V TO-226-3, TO-92-3 (TO-226AA)
BS170P Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 60pF @ 10V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 0.27A.As a result of its turn-off delay time, which is 10 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 3V.In addition to reducing power consumption, this device uses drive voltage (10V).
BS170P Features
a continuous drain current (ID) of 270mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 10 ns
a threshold voltage of 3V
BS170P Applications
There are a lot of Diodes Incorporated
BS170P applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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