BS170

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Drain to Source Breakdown Voltage :

60V

Input Capacitance :

24pF

Voltage - Rated DC :

60V

Published :

2005

Voltage :

60V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

11 Weeks

Threshold Voltage :

2.1V

Min Operating Temperature :

-55°C

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

5Ohm @ 200mA, 10V

Power Dissipation-Max :

830mW Ta

Base Part Number :

BS170

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

3

Vgs (Max) :

±20V

Supplier Device Package :

TO-92-3

Nominal Vgs :

2.1 V

Number of Elements :

1

Lead Free :

Lead Free

Weight :

4.535924g

Length :

5.2mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current :

5A

Continuous Drain Current (ID) :

500mA

Power Dissipation :

830mW

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

40pF @ 10V

Mounting Type :

Through Hole

Resistance :

5Ohm

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3V @ 1mA

Rds On Max :

5 Ω

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Copper, Silver, Tin

Width :

4.19mm

Packaging :

Bulk

Drain to Source Voltage (Vdss) :

60V

Height :

5.33mm

Element Configuration :

Single

Current Rating :

500mA

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Drain to Source Resistance :

5Ohm