BS170G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

4 ns

Element Configuration :

Single

Height :

5.33mm

Radiation Hardening :

No

Weight :

4.535924g

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

5 Ω @ 200mA, 10V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

500mA Ta

Nominal Vgs :

2 V

Published :

2005

Number of Elements :

1

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

0.5A

Vgs(th) (Max) @ Id :

3V @ 1mA

Transistor Element Material :

SILICON

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

2V

Pbfree Code :

yes

REACH SVHC :

No SVHC

Surface Mount :

No

Power Dissipation-Max :

350mW Ta

Terminal Position :

BOTTOM

Power Dissipation :

350mW

Width :

4.19mm

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Pin Count :

3

Contact Plating :

Copper, Silver, Tin

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Length :

5.2mm

Input Capacitance (Ciss) (Max) @ Vds :

60pF @ 10V

Number of Terminations :

3

Current Rating :

500mA

Voltage - Rated DC :

60V

Continuous Drain Current (ID) :

500mA

JESD-609 Code :

e1

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Resistance :

5Ohm

Mounting Type :

Through Hole

Turn-Off Delay Time :

4 ns

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free