BF422
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- Mfr.Part #
- BF422
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 24,567
- In Stock ：
- 24,567
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 830mW
- Peak Reflow Temperature (Cel) :
- 240
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 830mW
- Reach Compliance Code :
- not_compliant
- Base Part Number :
- BF422
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Voltage - Rated DC :
- 250V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Collector Current :
- 50mA
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Transition Frequency :
- 60MHz
- Collector Emitter Breakdown Voltage :
- 250V
- Frequency :
- 60MHz
- Number of Pins :
- 3
- Pin Count :
- 3
- Current Rating :
- 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Gain Bandwidth Product :
- 60MHz
- Transistor Type :
- NPN
- hFE Min :
- 50
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 250V
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Collector Emitter Voltage (VCEO) :
- 250V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Datasheets
- BF422
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF422 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
BF422 Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422 Applications
There are a lot of ON Semiconductor
BF422 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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