BF422
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- Mfr.Part #
- BF422
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 250V 0.05A TO92
- Stock
- 24,567
- In Stock ：
- 24,567
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- Non-RoHS Compliant
- Current Rating :
- 50mA
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 250V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power Dissipation :
- 830mW
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e0
- Base Part Number :
- BF422
- hFE Min :
- 50
- Reach Compliance Code :
- not_compliant
- Max Power Dissipation :
- 830mW
- Max Collector Current :
- 50mA
- Voltage - Rated DC :
- 250V
- Collector Emitter Saturation Voltage :
- 500mV
- Gain Bandwidth Product :
- 60MHz
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Published :
- 2005
- Frequency :
- 60MHz
- Collector Emitter Breakdown Voltage :
- 250V
- Mounting Type :
- Through Hole
- Transition Frequency :
- 60MHz
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 250V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 25mA 20V
- Peak Reflow Temperature (Cel) :
- 240
- Lead Free :
- Contains Lead
- Datasheets
- BF422
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BF422 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 25mA 20V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 60MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
BF422 Features
the DC current gain for this device is 50 @ 25mA 20V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is 50mA
a transition frequency of 60MHz
BF422 Applications
There are a lot of ON Semiconductor
BF422 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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