BF421,112

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Application :

AMPLIFIER

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

0.8W

Polarity/Channel Type :

PNP

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Power - Max :

830mW

Transition Frequency :

60MHz

Number of Terminations :

3

JESD-30 Code :

O-PBCY-T3

Base Part Number :

BF421

Peak Reflow Temperature (Cel) :

250

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 30mA

Pin Count :

3

Surface Mount :

No

Transistor Element Material :

SILICON

Frequency - Transition :

60MHz

JESD-609 Code :

e3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Published :

1996

Reach Compliance Code :

Unknown

Operating Temperature :

150°C TJ

Current - Collector (Ic) (Max) :

50mA

VCEsat-Max :

0.6 V

Voltage - Collector Emitter Breakdown (Max) :

300V

Collector-Base Capacitance-Max :

1.6pF

Packaging :

Bulk

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

PNP

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.95

Current - Collector Cutoff (Max) :

10nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 25mA 20V

Configuration :

Single