BCV64B,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Case Connection :

COLLECTOR

Power Dissipation :

250mW

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Package / Case :

TO-253-4, TO-253AA

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

650mV

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

15nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Terminal Form :

Gull wing

Transition Frequency :

200MHz

Max Power Dissipation :

250mW

Number of Pins :

4

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V / 220 @ 2mA 700mV

Collector Emitter Breakdown Voltage :

6V

JESD-609 Code :

e3

VCEsat-Max :

0.65 V

Published :

2010

Max Breakdown Voltage :

6V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA

Emitter Base Voltage (VEBO) :

6V

Voltage - Collector Emitter Breakdown (Max) :

30V 6V

Pin Count :

4

Frequency :

100MHz

Transistor Type :

2 PNP (Dual)

Transistor Application :

SWITCHING

Max Collector Current :

100mA

ECCN Code :

EAR99

Base Part Number :

BCV64

Radiation Hardening :

No

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

30V

Gain Bandwidth Product :

100MHz

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ